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R464_15 PDF预览

R464_15

更新时间: 2024-09-18 01:26:27
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
2页 46K
描述
For Photon Counting 5 mm × 8 mm Bialkali Photocathode 51 mm (2 lnch) Diameter, Head-on Type

R464_15 数据手册

 浏览型号R464_15的Datasheet PDF文件第2页 
PHOTOMULTIPLIER TUBES  
R464, R585  
For Photon Counting 5 mm × 8 mm Bialkali Photocathode  
51 mm (2 lnch) Diameter, Head-on Type  
GENERAL  
Parameter  
R464  
R585  
Description / Value  
Unit  
nm  
nm  
nm  
mm  
300 to 650  
160 to 650  
420  
Bialkali  
Spectral Response  
Wavelength of Maximum Response  
MateriaI  
Minimum Effective Area  
R464  
R585  
Structure  
Number of Stages  
Photocathode  
5 × 8  
Borosilicate glass  
Synthetic silica glass  
Box and Grid  
12  
Window Material  
Dynode  
Operating Ambient Temperature  
Storage Temperature  
Base  
-30 to +50  
-80 to +50  
21-pin glass base  
E678-21C (supplied)  
°C  
°C  
Suitable Socket  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
1500  
0.01  
Unit  
V
mA  
Supply Voltage  
Between Anode and Cathode  
Average Anode Current  
CHARACTERISTICS (at 25 °C)  
Parameter  
Min.  
30  
100  
Typ.  
50  
50  
Max.  
15  
Unit  
µA/lm  
mA/W  
A/lm  
A/W  
Luminous (2856 K)  
Cathode Sensitivity  
Radiant at 420 nm  
Luminous (2856 K)  
Radiant at 420 nm  
300  
Anode Sensitivity  
Gain  
3.0 × 105  
6.0 × 106  
5
Anode Dark Counts (after 30 min storage in darkness)  
s-1  
Anode Pulse Rise Time  
Electron Transit Time  
13  
70  
ns  
ns  
Time Response  
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.  
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE  
Electrode  
K
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12  
P
Ratio  
4
0
2.5  
1.5  
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1000 Vdc, K: Cathode, Dy: Dynode, G: Grid, P: Anode  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.  

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