Datasheet > R2619ZD18L

R2619ZD18L

更新时间： 2024-09-15 20:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
13页	1003K
描述
Silicon Controlled Rectifier,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

R2619ZD18L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
Base Number Matches：	1

R2619ZD18L 数据手册

Date:- 10^thJan, 2019

Data Sheet Issue:- 4

Distributed Gate Thyristor

Type R2619Z#18# to R2619Z#25#

(Old Type Number: R600CH18-21)

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

1800-2500

1800-2100

1900-2200

MAXIMUM

LIMITS

2619

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)

I_T(d.c.)

I_TSM

Maximum average on-state current, T_sink=55°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

Peak non-repetitive surge t_p=10ms, V_rm=0.6V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_rm£10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_rm£10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6)

Critical rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

1792

1037

5227

4395

33.8

A²s

A/µs

I_TSM2

I²t

37.2

5.71×10⁶

6.92×10⁶

1000

I²t

(di/dt)_cr

1500

V_RGM

P_G(AV)

P_GM

Mean forward gate power

Peak forward gate power

T_{j op}

Operating temperature range

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_FG=2A, t_r£0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Type R2619Z#18# to R2619Z#25# Issue 4

Page 1 of 12

January 2019

12 3 4 5 6 7...13

中文翻译

下载PDF

与R2619ZD18L相关器件

型号	品牌	获取价格	描述	数据表
R2619ZD20J	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
R2619ZD21J	LITTELFUSE	获取价格	Littelfuse是分布式门极技术领域公认的全球领先公司。这些器件的阻断电压最高可达4
R2619ZD21K	LITTELFUSE	获取价格	Littelfuse是分布式门极技术领域公认的全球领先公司。这些器件的阻断电压最高可达4
R2619ZD21L	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
R2619ZD25J	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
R2619ZD25L	LITTELFUSE	获取价格	Littelfuse是分布式门极技术领域公认的全球领先公司。这些器件的阻断电压最高可达4
R261A	ETC	获取价格	Optoelectronic
R261B	ETC	获取价格	Optoelectronic
R262	ONSEMI	获取价格	Wideband Voice Capture and Noise Reduction Solution
R26-202-RNLG	ETC	获取价格	DRUCKREGLER ELEKTR 4 BIS 20MA 0.25ZOLL