Datasheet > QPD1025LEVB1

QPD1025LEVB1

更新时间： 2022-02-26 12:34:24

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
18页	1438K
描述
1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-Matched Transistor

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QPD1025LEVB1 数据手册

QPD1025L

1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor

Typical Measured Performance – Load-Pull Drive-up ^{1, 2}

Notes:

1. Test Conditions: V_D= 65 V, I_DQ= 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

2. The performance shown below is for only half of the device out of the two independent amplification paths.

3. See page 13 for load pull reference planes where the performance was measured.

Gain and PAE vs. Output Power

1.0 GHz - Efficiency Tuned

Gain and PAE vs. Output Power

1.0 GHz - Power Tuned

100

Gain

PAE

Gain

PAE

Zs-fo = 0.72-1.76i

Zs-2fo = 0.47+0.06i

Zs-3fo = 0.81+0.5i

Zl-fo = 2.31+0.392i

Zl-2fo = 0.79+0.69i

Zl-3fo = NaN

Zs-fo = 0.72-1.76i

Zs-2fo = 0.47+0.06i

Zs-3fo = 0.81+0.5i

Zl-fo = 2.863+2.045i

Zl-2fo = 0.79+0.69i

Zl-3fo = NaN

50 51 52 53 54 55 56 57 58 59 60

Output Power [dBm]

50 51 52 53 54 55 56 57 58 59 60

Output Power [dBm]

Gain and PAE vs. Output Power

1.1 GHz - Power Tuned

Gain and PAE vs. Output Power

1.1 GHz - Efficiency Tuned

100

Gain

PAE

Gain

PAE

Zs-fo = 0.94-2.29i

Zs-2fo = 0.47-0.06i

Zs-3fo = 0.52+0.8i

Zl-fo = 2.221+1.322i

Zl-2fo = 0.8+0.69i

Zl-3fo = NaN

Zs-fo = 0.94-2.29i

Zs-2fo = 0.47-0.06i

Zs-3fo = 0.52+0.8i

Zl-fo = 2.53+0.746i

Zl-2fo = 0.8+0.69i

Zl-3fo = NaN

50 51 52 53 54 55 56 57 58 59 60

Output Power [dBm]

50 51 52 53 54 55 56 57 58 59 60

Output Power [dBm]

Datasheet Rev. B │ Subject to change without notice

www.qorvo.com

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