Datasheet > QPD1025LEVB1

QPD1025LEVB1

更新时间： 2022-02-26 12:34:24

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
18页	1438K
描述
1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-Matched Transistor

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QPD1025LEVB1 数据手册

QPD1025L

1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor

Measured Load-Pull Smith Charts ^{1, 2, 3}

Notes:

1. Test Conditions: V_D= 65 V, I_DQ= 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

2. The performance shown below is for only half of the device out of the two independent amplification paths.

3. See page 13 for load pull reference planes where the performance was measured.

1.0GHz, Load-pull

Zs(fo) = 0.72-1.76i

Zs(2fo) = 0.47+0.06i

Zs(3fo) = 0.81+0.5i

Zl(2fo) = 0.79+0.69i

Zl(3fo) = NaN

• Max Power is 59.2dBm

at Z = 2.31+0.392i

 = -0.1238+0.0829i

• Max Gain is 20.3dB

at Z = 1.718+2.043i

 = -0.0709+0.4636i

• Max PAE is 78.5%

at Z = 2.863+2.045i

19.9

 = 0.0876+0.3182i

19.4

77.4

57.7

57.9

58.1

58.3

58.5

58.7

75.4

73.4

71.4

69.4

58.9

Power

Gain

59.1

PAE

Zo = 3

3dB Compression Referenced to Peak Gain

Datasheet Rev. B │ Subject to change without notice

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