IL211A/212A/213A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
• High Current Transfer Ratio
IL211A—20% Minimum
IL212A—50% Minimum
IL213A—100% Minimum
• Isolation Voltage, 2500 VAC
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
.120±.005
(3.05±.13)
.240
(6.10)
Anode
8
7
6
5
1
2
3
4
NC
.154±.005 Cathode
Base
C
L
(3.91±.13)
.016 (.41)
.015±.002
NC
NC
Collector
Emitter
RMS
Pin One ID
7°
.058±.005
(1.49±.13)
40°
.192±.005
(4.88±.13)
(.38±.05)
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
.004 (.10)
.008 (.20)
.125±.005
(3.18±.13)
.008 (.20)
5° max.
Lead
R.010
(.25) max.
.050 (1.27)
typ.
Coplanarity
±.0015 (.04)
max.
.020±.004
(.15±.10)
2 plcs.
.021 (.53)
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
Characteristics (T =25°C)
A
The IL211A/212A/213A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL211A//212A/213A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
Symbol Min.
Typ.
Max. Unit
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
V
1.3
0.1
25
1.5
V
I =10 mA
F
F
I
100
µA
pF
V =6.0 V
R
R
C
V =0
R
O
Detector
Breakdown Voltage
B
B
30
7
V
V
I =10 µA
VCEO
VECO
C
I =10 µA
E
Dark Current,
I
5
50
nA
V =10 V
CE
CEOdark
Collector-Emitter
I =0
A choice of 20, 50, and 100% minimum CTR at
F
I =10 mA makes these optocouplers suitable for a
variety of different applications.
F
Capacitance,
Collector-Emitter
C
10
pF
V =0
CE
CE
Maximum Ratings
Package
Emitter
DC Current Transfer
Ratio
IL211A
IL212A
IL213A
CTR
%
I =10 mA,
F
DC
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C............................90 mW
Derate Linearly from 25°C ......................1.2 mW/°C
V
=5 V
CE
20
50
100
50
80
130
Saturation Voltage,
Collector-Emitter
V
0.4
I =10 mA,
F
CEsat
Detector
I =2.0 mA
C
Collector-Emitter Breakdown Voltage ...............30 V
Emitter-Collector Breakdown Voltage .................7 V
Collector-Base Breakdown Voltage ..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C2.0 mW/°C
Isolation Test
Voltage
V
2500
VAC
pF
IO
RMS
Capacitance,
Input toOutput
C
R
0.5
100
3.0
IO
Package
Resistance,
Input to Output
GΩ
µs
IO
Total Package Dissipation at 25°C Ambient
(LED + Detector) ....................................280 mW
Derate Linearly from 25°C ......................3.3 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Switching Time
t
,t
I =2 mA,
on off
C
R =100 Ω,
E
V
=10 V
CE
5–1