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Q68000-A8887 PDF预览

Q68000-A8887

更新时间: 2024-09-24 22:44:11
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器个人通信GSMPCPCN
页数 文件大小 规格书
8页 52K
描述
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)

Q68000-A8887 数据手册

 浏览型号Q68000-A8887的Datasheet PDF文件第2页浏览型号Q68000-A8887的Datasheet PDF文件第3页浏览型号Q68000-A8887的Datasheet PDF文件第4页浏览型号Q68000-A8887的Datasheet PDF文件第5页浏览型号Q68000-A8887的Datasheet PDF文件第6页浏览型号Q68000-A8887的Datasheet PDF文件第7页 
GaAs MMIC  
CGY 59  
________________________________________________________________________________________________________  
P r e l i m i n a r y d a t a  
* Low noise preamplifier for mobile communication  
(PCN, DECT, GSM) in 2.7V to 6V systems  
* Biased monolithic microwave IC (MMIC)  
* Easily matchable to 50  
RF-out  
4
RF-GND  
5
Vd  
6
* No bias coil needed  
* Single positive supply voltage  
* Low noise figure and high gain  
NF=1.3dB, G=16.5dB @ 3V, 950MHz (typ.)  
NF=1.7dB, G=12dB @ 3V, 1.85GHz (typ.)  
* Low power consumption  
* Frequency range 200 MHz ... 2.5 GHz  
* Miniature package MW6 based on SOT23  
3
2
RF-in  
1
RF-GND  
DC-GND  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Type  
Marking  
Ordering code  
(taped)  
Package 1)  
CGY 59  
Y5  
Q68000-A8887  
MW-6  
Maximum ratings  
Drain voltage  
Symbol  
Unit  
V
V
8
150  
D
Channel temperature  
Storage temperature range  
T
T
°C  
Ch  
stg  
-55...+150  
80  
°C  
2)  
Total power dissipation (TS < 132°C)  
P
mW  
tot  
Thermal resistance  
Channel-soldering point (GND)  
R
< 220  
< 300  
K/W  
K/W  
thChS  
3)  
Junction-ambient  
R
thJA  
1) Dimensions see chapter Package Outlines  
2) Please care for sufficient heat dissipation on the pcb!  
3) Package mounted on alumina 15mm x16.7 mm x0.7 mm  
Siemens Aktiengesellschaft  
pg. 1/8  
12.01.96  
HL EH PD 21  

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