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Q68000-A8883 PDF预览

Q68000-A8883

更新时间: 2024-11-06 22:44:11
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器功率放大器过程控制系统个人通信PCSPCN
页数 文件大小 规格书
14页 142K
描述
GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier)

Q68000-A8883 数据手册

 浏览型号Q68000-A8883的Datasheet PDF文件第2页浏览型号Q68000-A8883的Datasheet PDF文件第3页浏览型号Q68000-A8883的Datasheet PDF文件第4页浏览型号Q68000-A8883的Datasheet PDF文件第5页浏览型号Q68000-A8883的Datasheet PDF文件第6页浏览型号Q68000-A8883的Datasheet PDF文件第7页 
GaAs MMIC  
CGY 181  
________________________________________________________________________________________________________  
Preliminary Datasheet  
* Power amplifier for PCN/PCS applications  
* Fully integrated 2 stage amplifier  
* Operating voltage range: 2.7 to 6 V  
* Overall power added efficiency 35 %  
* Input matched to 50 , simple output match  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Type  
Marking  
Ordering code  
(8-mm taped)  
Package 1)  
CGY 181  
CGY 181  
Q68000-A8883  
MW 12  
Maximum ratings  
Characteristics  
Symbol  
max. Value  
Unit  
V
Positive supply voltage  
V
9
D
G
D
2
Negative supply voltage )  
V
-8  
V
Supply current  
I
2
A
Channel temperature  
Storage temperature  
RF input power  
T
T
150  
°C  
°C  
dBm  
W
Ch  
-55...+150  
stg  
P
25  
5
in  
P
Total power dissipation (Ts 81 °C)  
tot  
Ts: Temperature at soldering point  
Thermal Resistance  
Channel-soldering point  
R
K/W  
14  
thChS  
1)  
Plastic body identical to SOT 223, dimensions see chapter Package Outlines  
2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR 0V  
Siemens Aktiengesellschaft  
pg. 1/14  
01.02.96  
HL EH PD 21  

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