Datasheet > Q68000-A8721-T

Q68000-A8721-T

更新时间： 2024-01-26 08:51:44

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ZWEIFACHKOPPLER SMD 100PROZENT BEI 10MA

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中文翻译

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数据手册

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Q68000-A8721-T 数据手册

ILD205T/206T/207T/211T/213T/217T

Dual Phototransistor

Small Outline Surface Mount Optocoupler

FEATURES

• Two Channel Coupler

Dimensions in inches (mm)

Pin 1

• SOIC-8A Surface Mountable Package

• Standard Lead Spacing of .05"

• Available only on Tape and Reel Option

(Conforms to EIA Standard 481-2)

Anode 1

Cathode 2

Anode 3

8 Collector

7 Emitter

.120 .002

(3.05 .05)

.154 .002

(3.91 .05)

.240

(6.10)

6 Collector

5 Emitter

Cathode 4

• Isolation Test Voltage, 3000 V

• High Current Transfer Ratios

ILD205T, 40 – 80%

ILD206T, 63 –125%

ILD207T, 100 – 200%

RMS

.016 (.41)

.230 .002

(5.84 .05)

40°

.015 .002

(.38 .05)

7°

.058

(1.49)

.125 (3.18)

ILD211T, 20% Minimum

ILD213T, 100% Minimum

ILD217T, 100% Minimum at 1.0 mA

.008 (.20)

.004 (.10)

.008 (.20)

5° max.

Lead

.050 (1.27) typ.

.040 (1.02)

R.010

(.25) max.

Coplanarity

.001 (.04)

max.

• High BV , 70 V

.020 .004

(.5 .10)

2 plcs.

CEO

• Compatible with Dual Wave, Vapor Phase and

IR Reﬂow Soldering

• Underwriters Laboratory File #E52744

(Code LetterY)

Table 1. Characteristics T =25°C

Parameter

Min. Typ. Max. Unit

Condition

DESCRIPTION

Emitter

The ILD205T/206T/207T/211T/213T/217T are opti-

cally coupled pairs with a Gallium Arsenide infrared

LED and a silicon NPN phototransistor. Signal infor-

mation, including a DC level, can be transmitted by

the device while maintaining a high degree of elec-

trical isolation between input and output. The

Forward Voltage

Reverse Current

Capacitance

Detector

—

1.2

0.1

1.55

100

—

I =10 mA

µA

V =6.0 V

V =0

ILD205T/6T/7T/11T/13T/17T come in a standard

SOIC-8A small outline package for surface mount-

ing which makes it ideally suited for high density

applications with limited space. In addition to elimi-

nating through-holes requirements, this package

conforms to standards for surface mounted devices.

Breakdown Voltage BV

7.0

—

I =10 µA

CEO

ECO

—

I =10 µA

5.0

=10 V

CEO

I =0

Collector-Emitter

Capacitance

—

A speciﬁed minimum and maximum CTR allows a nar-

row tolerance in the electrical design of the adjacent cir-

Package

cuits. The high BV

of 70 volts gives a higher safety

CEO

DC Current Transfer, ILD205 40

=5.0 V

—

125

200

—

I =10 mA

margin compared to the industry standard of 30 volts.

ILD206 63

ILD207 100

ILD211 20

ILD213 100

ILD205 13

ILD206 22

ILD207 34

ILD217 100

—

Maximum Ratings (Each Channel)

Emitter

—

Peak Reverse Voltage .....................................6.0 V

Peak Pulsed Current (1.0 µs, 300 pps) ...........1.0 A

Continuous Forward Current per Channel ....30 mA

Power Dissipation at 25°C............................50 mW

Derate Linearly from 25°C....................0.66mW/°C

Detector

Collector-Emitter Breakdown Voltage...............70 V

Emitter-Collector Breakdown Voltage..............7.0 V

Power Dissipation per Channel..................125 mW

Derate Linearly from 25°C....................1.67mW/°C

Package

Total Package Dissipation at 25°C Ambient

(2 LEDs + 2 Detectors, 2 Channels).......300 mW

Derate Linearly from 25°C......................4.0mW/°C

Storage Temperature ...................–55°C to +150°C

Operating Temperature ...............–55°C to +100°C

Soldering Time at 260°C ............................. 10 sec.

—

120

—

I =1.0 mA

—

Collector-Emitter Saturation

Voltage V

—

0.4

I =10 mA

I =2.5 mA

CE(sat)

Capacitance, Input to Output

Isolation Test Voltage

Resistance, Input to Output

Turn-on Time

—

0.5

—

3000

—

t=1.0 sec.

—

RMS

100

5.0

4.0

GΩ

µs

—

I =2.0 mA

R = 100 Ω

Turn-off Time

—

µs

=5.0 V

 2001 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

2–181

February 12, 2001-10

中文翻译

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