Datasheet > Q62702-A1006

Q62702-A1006

更新时间： 2022-11-26 07:36:00

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
3页	50K
描述
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators)

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Q62702-A1006 数据手册

Silicon Crossover Ring Quad Schottky Diode

BAT 114-099R

Features

• High barrier diode for double balanced mixers,

phase detectors and modulators

ESD: ElectroStatic Discharge sensitive device, observe handling precautions!

Type

Marking Ordering Code Pin Configuration

(taped)

Package

BAT 114-099R 14s

Q62702-A1006

SOT-143

Dimensions see chapter Package Outlines

Maximum Ratings

(per diode)

Parameter

Symbol

I_F

Limit Values Unit

Forward current

°C

Operation temperature

Storage temperature

Power dissipation, T_S≤ 70 °C

T_op

− 55 to + 150

100

T_stg

°C

P_tot

Semiconductor Group

02.96

12 3

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