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Q62702-A1051 PDF预览

Q62702-A1051

更新时间: 2024-09-24 22:44:11
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管开关
页数 文件大小 规格书
4页 75K
描述
Silicon Switching Diode Array (Connected in series For high speed switching applications)

Q62702-A1051 技术参数

生命周期:Active包装说明:R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.6
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.25 W
最大重复峰值反向电压:70 V最大反向恢复时间:0.006 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

Q62702-A1051 数据手册

 浏览型号Q62702-A1051的Datasheet PDF文件第2页浏览型号Q62702-A1051的Datasheet PDF文件第3页浏览型号Q62702-A1051的Datasheet PDF文件第4页 
BAV 99W  
Silicon Switching Diode Array  
• Connected in series  
• For high speed switching applications  
Type  
Marking Ordering Code  
A7s Q62702-A1051  
Pin Configuration  
1=A1 2=C2  
Package  
BAV 99W  
3=C1/A2 SOT-323  
Maximum Ratings per Diode  
Parameter  
Symbol  
Values  
70  
Unit  
Diode reverse voltage  
Peak reverse voltage  
Forward current  
V
V
V
R
70  
RM  
I
I
200  
4.5  
mA  
A
F
Surge forward current, t = 1 µs  
Total Power dissipation  
FS  
P
mW  
tot  
T = 103 °C  
250  
S
Junction temperature  
Storage temperature  
T
150  
°C  
j
T
- 65 ... + 150  
stg  
Thermal Resistance  
1)  
Junction ambient  
R
R
430  
K/W  
thJA  
Junction - soldering point  
190  
thJS  
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu  
Semiconductor Group  
1
Apr-03-1997  

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