Datasheet > PXT8050

PXT8050

更新时间： 2024-11-19 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	632K
描述
SOT-89

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中文翻译

获取价格

数据手册

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PXT8050 数据手册

PXT8050

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to PXT8550

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1.5

Collector Power Dissipation

500

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

250

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=100uA，I_E=0

I =0.1mA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CEO

V(BR)EBO

I_CBO

，

I_E=100uA，I_C=0

V_CB=40V, I_E=0

0.1

Collector cut-off current

Emitter cut-off current

I_CEO

uA V_CE=20V, I_E=0

I_EBO

h_FE1

h_FE2

V_CE(sat)

V_BE(sat)

V_BE

0.1

uA V_EB=5V, I_C=0

V_CE=1V, I_C=100mA

V_CE=1V, I_C=800mA

400

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.5

1.2

I_C=800mA，I_B=80mA

V_CE=1V, I_C=10mA

I_B=1A

Base-emitter positive favor voltage

Transition frequency

V_BEF

f_T

1.55

V_CE=10V,I_C=50mA, f=30

100

MHz

V_CB=10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

85-160

120-200

160-300

300-400

Marking

1 / 4

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