Datasheet > PXT8050

PXT8050

更新时间： 2024-11-18 09:57:03

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	470K
描述
TRANSISTOR(NPN)

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中文翻译

获取价格

数据手册

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PXT8050 数据手册

PXT8050

TRANSISTOR(NPN)

SOT-89

FEATURES

Compliment to PXT8550

1. BASE

MARKING: Y1

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

Storage Temperature

1.5

P_C

0.5

℃

T_J

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100uA, I_E=0

V_(BR)CEOI_C=0.1mA, I_B=0

V_(BR)EBOI_E=100μA, I_C=0

I_CBO

I_CEO

V_CB=40V, I_E=0

0.1

400

μA

Emitter cut-off current

V_CE=20V, I_E=0

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

V_CE=1V, I_C=100mA

V_CE=1V, I_C=800mA

I_C=800mA, I_B=80mA

V_CE=1V, I_C=10mA

I_B=1A

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.5

1.2

Base-emitter positive favor voltage

Transition frequency

V_BEF

f_T

1.55

V_CE=10V,I_C=50mA,f=30MHz

V_CB=10V,I_E=0,f=1MHz

100

MHz

output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

Range

85-160

120-200

160-300

300-400

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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