Datasheet > PXP400-100QS

PXP400-100QS

更新时间： 2024-09-21 11:16:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	292K
描述
100 V, P-channel Trench MOSFETProduction

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PXP400-100QS 数据手册

PXP400-100QS

100 V, P-channel Trench MOSFET

7 May 2020

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface-

Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Trench MOSFET technology

•

MLPAK33 package (3.3 x 3.3 mm footprint)

Low thermal resistance

Low 0.8 mm profile

3. Applications

•

Active clamp circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

-100

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= -10 V; T_amb= 25 °C

[1]

-1.4

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -10 V; I_D= -1.4 A; T_j= 25 °C

275

400

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...14

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