Datasheet > PXP018-20QX

PXP018-20QX

更新时间： 2024-11-11 11:12:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	312K
描述
20 V, P-channel Trench MOSFETProduction

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PXP018-20QX 数据手册

PXP018-20QX

20 V, P-channel Trench MOSFET

26 October 2021

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-

Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Trench MOSFET technology

MLPAK33 package (3.3 x 3.3 mm footprint)

3. Applications

•

High-side load switch

Battery management

DC-to-DC conversion

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

-20

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-12

I_D

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

[1]

-13.7

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -4.5 V; I_D= -8.1 A; T_j= 25 °C

V_GS= -2.5 V; I_D= -6.3 A; T_j= 25 °C

14.4

22.5

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

12 3 4 5 6 7...14

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