Datasheet > PUMB24-115

PUMB24-115

更新时间： 2024-02-28 23:54:45

品牌	Logo	应用领域
飞利浦 - PHILIPS		/
页数	文件大小	规格书
11页	66K
描述
Small Signal Bipolar Transistor, 0.02A I(C), 2-Element, PNP, Silicon

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PUMB24-115 数据手册

PEMB24; PUMB24

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

5. Limiting values

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

V_CBO

V_CEO

V_EBO

V_I

collector-base voltage

open emitter

open base

−50

−10

collector-emitter voltage

emitter-base voltage

input voltage

open collector

positive

+10

−40

−20

−100

negative

I_O

output current (DC)

peak collector current

total power dissipation

SOT363

I_CM

P_tot

T_amb≤ 25 °C

[1]

200

°C

[1] [2]

SOT666

200

T_stg

storage temperature

junction temperature

ambient temperature

−65

+150

150

T_j

°C

T_amb

−65

+150

°C

Per device

P_tot

total power dissipation

SOT363

T_amb≤ 25 °C

[1]

300

[1] [2]

SOT666

[1] Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

6. Thermal characteristics

Table 7:

Symbol

Per transistor

Thermal characteristics

Parameter

Conditions

Min

Typ

Max Unit

R_th(j-a)

thermal resistance from

T_amb≤ 25 °C

junction to ambient

[1]

SOT363

625

K/W

[1] [2]

SOT666

Per device

R_th(j-a)

thermal resistance from

junction to ambient

T_amb≤ 25 °C

[1]

SOT363

SOT666

416

K/W

[1] [2]

[1] Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

9397 750 14368

Product data sheet

Rev. 01 — 18 February 2005

3 of 11

1 234 5 6 7...11

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