PTF040551F

更新时间： 2024-11-11 00:04:27

品牌	Logo	应用领域
英飞凌 - INFINEON		射频
页数	文件大小	规格书
10页	260K
描述
Thermally Enhanced High Power RF LDMOS FETs 55W, 450-500MHZ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PTF040551F 数据手册

PTF040551E

PTF040551F

Thermally Enhanced High Power RF LDMOS FETs

55 W, 450 – 500 MHz

Description

The PTF040551E and PTF040551F are thermally-enhanced, 55-watt,

internally matched GOLDMOS FETs intended for CDMA applications in

PTF040551E

Package 30265

the 450 to 500 MHz band. Full gold metallization ensures excellent device

lifetime and reliability.

PTF040551F*

Package 31265

Features

IS-95 CDMA Performance

V_DD= 28 V, I_DQ= 450 mA, f = 470 MHz

•

Thermally-enhanced packages

Broadband internal matching

Typical CW performance

- Output power at P–1dB = 65 W

- Gain = 20 dB

-20

-30

-40

-50

-60

-70

-80

Efficiency

- Efficiency = 57%

•

Integrated ESD protection: Human Body

Model, Class 1 (minimum)

ACP F_C– 0.75 MHz

•

Excellent thermal stability

Low HCI drift

Capable of handling 5:1 VSWR @ 28 V,

55 W (CW) output power

ACPR F_C+ 1.98 MHz

Output Power, Avg. (dBm)

RF Characteristics

CDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

= 28 V, I = 450 mA, P = 10 W, f = 470 MHz

OUT

Characteristic

Gain

Symbol

Min

—

Typ

Max

—

Unit

Drain Efficiency

η_D

—

Adjacent Channel Power Ratio

ACPR

—

–45

—

dBc

*See Infineon distributor for future availability.

Rev. 03, 2005-08-22

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

12 3 4 5 6 7...10

中文翻译

下载PDF

与PTF040551F相关器件

型号	品牌	获取价格	描述	数据表
PTF041501E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 150W, 450-500MHZ
PTF041501F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 150W, 450-500MHZ
PTF08	OMRON	获取价格	General Purpose Relay
PTF080101	INFINEON	获取价格	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
PTF080101M	INFINEON	获取价格	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 450-960MHZ
PTF080101S	INFINEON	获取价格	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
PTF080101S-	INFINEON	获取价格	LDMOS RF Power Field Effect Transistor 10W, 860-960 MHz
PTF080101S-DS1	INFINEON	获取价格	LDMOS RF Power Field Effect Transistor 10W, 860-960 MHz
PTF080451	INFINEON	获取价格	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
PTF080451E	INFINEON	获取价格	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz