Datasheet > PTF081301EF-03

PTF081301EF-03

更新时间： 2024-11-11 00:04:27

品牌	Logo	应用领域
英飞凌 - INFINEON		射频
页数	文件大小	规格书
11页	282K
描述
Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHz

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PTF081301EF-03 数据手册

PTF081301E

PTF081301F

Thermally-Enhanced High Power RF LDMOS FETs

130 W, 869 – 960 MHz

Description

The PTF081301E and PTF081301F are 130-watt, internally-matched

GOLDMOS FETs intended for EDGE and CDMA applications in the 869

to 960 MHz bands. Thermally-enhanced packaging provides the coolest

operation available. Full gold metallization ensures excellent device

lifetime and reliability.

PTF081301E

Package 30248

PTF081301F

Package 31248

EDGE Modulation Spectrum Performance

Features

V_DD= 28 V, I_DQ= 950 mA, f = 959.8 MHz

•

Thermally-enhanced packages

Broadband internal matching

-30

-40

-50

-60

-70

-80

-90

Typical EDGE performance

- Average output power = 65 W

- Gain = 18 dB

T_CASE= 25°C

T_CASE= 90°C

Efficiency

- Efficiency = 40%

•

Typical CW performance

- Output power at P–1dB = 150 W

- Gain = 17 dB

400 kHz

- Efficiency = 55%

Integrated ESD protection: Human Body

Model, Class 1 (minimum)

600 kHz

•

Excellent thermal stability

Low HCI drift

Capable of handling 10:1 VSWR @ 28 V,

130 W (CW) output power

Output Power (dBm)

RF Characteristics

EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

= 28 V, I = 950 mA, P = 65 W, f = 959.8 MHz

OUT

Characteristic

Error Vector Magnitude

Symbol

EVM (RMS)

ACPR

Min

—

Typ

2.5

–62

–74

Max

—

Unit

Modulation Spectrum @ 400 kHz

Modulation Spectrum @ 600 kHz

Gain

—

dBc

ACPR

—

Drain Efficiency

η_D

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 03, 2005-05-02

12 3 4 5 6 7...11

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