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TY Semiconductor Co., Ltd 更新时间：2023-07-26 14:47:21

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

2SK3377	TYSEMI	获取价格		晶体晶体管开关	Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)

2SK3366	TYSEMI	获取价格		晶体晶体管开关	Super low on-state resistance: RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 10 A)

2SK3365	TYSEMI	获取价格		晶体晶体管开关	Super low on-state resistance: RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)

2SK3355	TYSEMI	获取价格		晶体晶体管开关脉冲局域网	Super low on-state resistance: RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 42 A)

2SK3325	TYSEMI	获取价格		栅极	Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)

2SK3322	TYSEMI	获取价格		栅极	Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A)

2SK3305	TYSEMI	获取价格		晶体栅极晶体管开关脉冲局域网	Low gate charge QG = 13 nC TYP. (VDD = 400V, VGS = 10 V, ID = 5.0A)

2SK3299	TYSEMI	获取价格		晶体栅极晶体管开关脉冲局域网	Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)

2SK3295	TYSEMI	获取价格		晶体晶体管开关脉冲驱动局域网	4.5 V drive available Low on-state resistance RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 18 A)

2SK3294	TYSEMI	获取价格		栅极	Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 1

2SK3274S	TYSEMI	获取价格		驱动器开关	Low on-resistance RDS(on) = 10 m typ. 4.5 V gate drive device High speed switching

2SK3269	TYSEMI	获取价格		晶体晶体管开关脉冲驱动	4.5 V drive available Low on-state resistance RDS(on)1 = 12 m MAX. (VGS= 10 V, ID = 18 A)

2SK3225	TYSEMI	获取价格		晶体晶体管开关	Low On-State Resistance RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 17A)

2SK3116	TYSEMI	获取价格		晶体栅极晶体管开关脉冲局域网	Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)

2SK3111	TYSEMI	获取价格		晶体栅极晶体管开关脉冲局域网	Gate voltage rating -30 V Avalanche capability rated Surface mount device available

2SK3109	TYSEMI	获取价格		栅极	Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0

2SK3065	TYSEMI	获取价格		驱动	Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).

2SK3025	TYSEMI	获取价格		晶体晶体管开关	Avalanche energy capacity guaranteed High electrostatic breakdown voltage

2SK3022	TYSEMI	获取价格		晶体开关晶体管	Avalanche energy capacity guaranteed High-speed switching Low ON-resistance

2SK3018	TYSEMI	获取价格		驱动器开关	Low on-resistance. Fast switching speed. Silicon N-channel MOSFET Drive circuits can be si

2SK2925S	TYSEMI	获取价格		晶体驱动器栅极晶体管开关脉冲栅极驱动	Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source

2SK2869	TYSEMI	获取价格		驱动器栅极栅极驱动	Low on-resistance RDS = 0.033 typ. 4V gate drive device can be driven from 5V source

2SK2859	TYSEMI	获取价格		驱动器开关	Low On resistance. Ultrahigh-speed switching. 4V drive.

2SK2857	TYSEMI	获取价格		驱动	Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX

2SK2796S	TYSEMI	获取价格		开关	Low on-resistance High speed switching Drain to source voltage VDSS 60 V

2SK2735S	TYSEMI	获取价格		晶体驱动器栅极开关晶体管脉冲栅极驱动	4V gate drive device can be driven from 5V source High speed switching

2SK2731	TYSEMI	获取价格		开关驱动	Low on-resistance. Fast switching speed. Easily designed drive circuits. Easy to parallel.

2SK2715	TYSEMI	获取价格		开关	Low on-resistance. Fast switching speed. Wide SOA (safe operating area).

2SK2504	TYSEMI	获取价格		开关	Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Easy to parallel.

2SK2484	TYSEMI	获取价格		晶体晶体管开关脉冲局域网	Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A) High Avalanche Capability Rating