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TY Semiconductor Co., Ltd 更新时间：2021-03-11 07:54:38

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

KUK7105-40AIE	TYSEMI	获取价格		传感器温度传感器	Integrated temperature sensor Electrostatic discharge protection Q101 compliant

KUK110-50GL	TYSEMI	获取价格		过载保护	Vertical power DMOS output stage Overload protection against over temperature

KUK108-50DL	TYSEMI	获取价格		过载保护	Vertical power DMOS output stage Overload protection against over temperature

KRF7607	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance N-Channel MOSFET

KRF7603	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance N-Channel MOSFET

KRF2805S	TYSEMI	获取价格			Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

KQB6N25	TYSEMI	获取价格		栅极	5.5A, 500 V. RDS(ON) = 1 VGS = 10 V Low gate charge (typical 6.6nC)

KQB5N20	TYSEMI	获取价格		栅极	4.5A, 200 V. RDS(ON) = 1.2 VGS = 10 V Low gate charge (typical 6.0nC)

KQB4N50	TYSEMI	获取价格		栅极开关	3.4A, 500 V. RDS(ON) = 2.7 VGS = 10 V Low gate charge (typical 10nC) Fast switching

KQB2N50	TYSEMI	获取价格		栅极开关	2.1A, 500 V. RDS(ON) = 5.3 VGS = 10 V Low gate charge (typical 6.0nC) Fast switching

KO3414	TYSEMI	获取价格			VDS (V) = 20V ID= 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V)

KO3400	TYSEMI	获取价格			VDS (V) = 30V ID= 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V)

SI2300	TYSEMI	获取价格			VDS=20V,RDS(ON)=40m VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m

KI4300DY	TYSEMI	获取价格			TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized

KI2312DS	TYSEMI	获取价格			1.8-V Rated RoHS Compliant Drain-Source Voltage VDS 20 V

KI2306DS	TYSEMI	获取价格		测试	TrenchFET Power MOSFET Rg Tested Drain-source voltage VDS 30 V

KI2300	TYSEMI	获取价格			VDS=20V,RDS(ON)=40m VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m

KI1304BDL	TYSEMI	获取价格		测试	TrenchFET Power MOSFET 100 Rg Tested Drain-source voltage VDS 30 V

KI1302DL	TYSEMI	获取价格		栅	Drain-source voltage VDS 30 V Gate-source voltage VGS -20 V

KW306	TYSEMI	获取价格			High density mounting is possible because of the complex type Low ON-state resistance

KTS1C1S250	TYSEMI	获取价格		二极管齐纳二极管栅	Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode

KRF7507	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET

KRF7379	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge

KRF7350	TYSEMI	获取价格			Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount

KDS2572	TYSEMI	获取价格			RDS(ON) = 0.040 (Typ.), VGS = 10V Maximized efficiency at high frequencies

KDD6030L	TYSEMI	获取价格		栅极开关	12 A, 30 V. RDS(ON) = 14.5m VGS = 10 V Low gate charge Fast switching speed

KDD2572	TYSEMI	获取价格			rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V

KDB3652	TYSEMI	获取价格			rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V

KDB2572	TYSEMI	获取价格		脉冲	rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A UIS Capability (Single Pulse and Repetitive Pulse

FDB3682	TYSEMI	获取价格			rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V