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KW306 PDF预览

KW306

更新时间: 2024-10-30 12:04:19
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 780K
描述
High density mounting is possible because of the complex type Low ON-state resistance

KW306 数据手册

 浏览型号KW306的Datasheet PDF文件第2页 
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Product specification  
KW306  
Features  
High density mounting is possible because of the complex type  
which holds low-on-resistance,very-high-speed-switching  
and 4-volt-drive N-/P-channel/ MOSFETS  
Low ON-state resistance  
1 : Source1  
2 : Gate1  
5 : Drain2  
6 : Drain2  
7 : Drain1  
8 : Drain1  
3 : Source2  
4 : Gate2  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to Source Voltage  
Symbol  
N-Channel  
P-Channel  
Unit  
V
VDSS  
VGSS  
ID  
30  
25  
30  
25  
3
Gate to Source Voltage  
Drain Current(DC)  
V
A
Drain Current(Pulse) *1  
Allowable power Dissipation *2  
Total Dissipation *2  
IDP  
32  
-32  
A
1.7  
2.0  
150  
PD  
W
W
PT  
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
-55 to 150  
*1 PW 10 S, dutycycle 1%  
*2 Mounted on ceramic board (1000mm2 X 0.8mm) 1unit  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  

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