Datasheet > KDD2572

KDD2572

更新时间： 2024-09-26 12:04:19

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	176K
描述
rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V

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KDD2572 数据手册

SMMDD TTyyppee

TransistIoCrs

Product specification

KDD2572

TO-252

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

Features

+0.2

5.30

-0.2

+0.8

0.50

-0.7

r^DS(ON)= 45m (Typ.), V^GS= 10V, I^D= 9A

Q^g(tot)= 26nC (Typ.), V^GS= 10V

Low Miller Charge

0.127

max

+0.1

0.80

-0.1

Low Q^RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

+0.1

0.60

-0.1

1. Gate

2.3

4.60

+0.15

-0.15

2. Drain

3. Source

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^DSS

Rating

150

Unit

Drain to Source Voltage

Gate to Source Voltage

V^GS

Drain Current Continuous (T^C= 25 , V^GS= 10V)

Drain Current Continuous (T^C= 100 , V^GS= 10V)

I^D

Drain Current Continuous(T^C=100 ,V^GS=10V,R

^JA=52 /W))

Single Pulse Avalanche Energy *

Power dissipation

E^AS

P^D

135

P^D

0.9

Derate above 25

Operating and Storage Temperature

Thermal Resistance Junction to Case

T^J, T^STG

-55 to 175

1.11

Thermal Resistance Junction to Ambient to252

,1in²copper pad area

100

* Starting TJ = 25 , L = 0.2 mH, IAS = 19A.

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