Datasheet > KI1304BDL

KI1304BDL

更新时间： 2024-10-30 12:04:27

品牌	Logo	应用领域
TYSEMI		测试
页数	文件大小	规格书
2页	253K
描述
TrenchFET Power MOSFET 100 Rg Tested Drain-source voltage VDS 30 V

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KI1304BDL 数据手册

TransistIoCrs

MOSFET

Product specification

KI1304BDL

Features

TrenchFET Power MOSFET

100% Rg Tested

1 Gate

2 Source

3 Drain

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source voltage

Symbol

V^DS

Rating

Unit

Gate-source voltage

V^GS

0.90

0.71

Continuous drain current (T^J= 150

)

T^c=25

T^c=70

I^D

0.85*1,2

0.68*1,2

Continuous drain current (T^J= 150

T^a=25

T^a=70

I^D

Pulsed drain current

I^DM

0.31

0.28

Continuous Source Drain Diode Current Tc=25

Ta=25

I^S

0.37

0.24

Power dissipation

T^c=25

T^c=70

P^D

0.34*1,2

0.22*1,2

Power dissipation

Ta=25

T^a=70

P^D

Operating junction and storage temperature range

*1 Surface Mounted on 1" X 1" FR4 Board.

*2 t = 5 sec

T^j,T^stg

-55 to +150

Thermal Resistance Ratings Ta = 25

Parameter

Symbol

Typical

Maximum

375

Unit

Maximum Junction-to-Ambient*1,2

R^thJA

R^thJF

315

285

5 sec

Maximum Junction-to-Foot (Drain) Steady State

*1 Surface Mounted on 1" X 1" FR4 Board.

340

*2 Maximum under steady state conditions is 360 /W.

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