Datasheet > PQMH13-Q

PQMH13-Q

更新时间： 2024-11-13 15:19:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	259K
描述
NPN/NPN resistor-equipped double transistor; R1 = 4.7 k?, R2 = 47 k?Production

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PQMH13-Q 数据手册

PQMH13-Q

NPN/NPN resistor-equipped double transistor;

R1 = 4.7 kΩ, R2 = 47 kΩ

13 July 2023

Product data sheet

1. General description

NPN/NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1010B-6 (SOT1216)

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

100 mA output current capability

•

Built-in bias resistors

Simplifies circuit design

Low package height of 0.37 mm

Reduces component count

Reduces pick and place costs

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low current peripheral driver

Control of IC inputs

Replaces general-purpose transistors in digital applications

Mobile applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

I_O

output current

100

6.1

kΩ

bias resistor 1 (input)

bias resistor ratio

T_amb= 25 °C

[1]

3.3

4.7

R2/R1

[1] See section "Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...13

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