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PQMH2 PDF预览

PQMH2

更新时间: 2024-09-24 11:13:43
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
14页 701K
描述
NPN/NPN resistor-equipped transistors; R1=47kΩ,R2=47kΩProduction

PQMH2 数据手册

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PQMH2  
NPN/NPN resistor-equipped transistors;  
R1 = 47 kΩ, R2 = 47 kΩ  
4 November 2015  
Product data sheet  
1. General description  
NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6  
(SOT1216) Surface-Mounted Device (SMD) plastic package.  
NPN/PNP complement: PQMD12.  
2. Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Simplifies circuit design  
Low package height of 0.37 mm  
Reduces component count  
Reduces pick and place costs  
AEC-Q101 qualified  
3. Applications  
Low current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors in digital applications  
Mobile applications  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-
-
50  
V
IO  
output current  
100  
mA  
Per transistor  
R1  
bias resistor 1  
Tamb = 25 °C  
[1]  
[1]  
33  
47  
1
61  
kΩ  
R2/R1  
bias resistor ratio  
0.8  
1.2  
[1] See section "Test information" for resistor calculation and test conditions.  
 
 
 
 
 

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