Datasheet > PN4249L34Z

PN4249L34Z

更新时间： 2024-09-18 10:07:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	294K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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PN4249L34Z 数据手册

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Tech n ologies

PN4249

TO-92

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 300 mA. Sourced

from Process 68. See PN200 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

500

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN4249

P_D

Total Device Dissipation

625

5.0

mW/ C

Derate above 25 C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

R_θ

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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