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PMP4201V,115 PDF预览

PMP4201V,115

更新时间: 2024-11-26 15:48:11
品牌 Logo 应用领域
恩智浦 - NXP 放大器光电二极管晶体管
页数 文件大小 规格书
14页 106K
描述
PMP4201V; PMP4201G; PMP4201Y - NPN/NPN matched double transistors SOT 6-Pin

PMP4201V,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT包装说明:PLASTIC PACKAGE-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.39外壳连接:ISOLATED
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

PMP4201V,115 数据手册

 浏览型号PMP4201V,115的Datasheet PDF文件第2页浏览型号PMP4201V,115的Datasheet PDF文件第3页浏览型号PMP4201V,115的Datasheet PDF文件第4页浏览型号PMP4201V,115的Datasheet PDF文件第5页浏览型号PMP4201V,115的Datasheet PDF文件第6页浏览型号PMP4201V,115的Datasheet PDF文件第7页 
PMP4201V; PMP4201G;  
PMP4201Y  
NPN/NPN matched double transistors  
Rev. 04 — 28 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic  
packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated  
internally.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
NPN/NPN hFE1/hFE2 PNP/PNP  
0.95 complement  
complement  
JEITA  
-
PMP4201V  
PMP4201G  
PMP4201Y  
SOT666  
SOT353  
SOT363  
PMP4501V  
PMP4501G  
PMP4501Y  
PMP5201V  
PMP5201G  
PMP5201Y  
SC-88A  
SC-88  
1.2 Features  
I Current gain matching  
I Base-emitter voltage matching  
I Common emitter configuration for SOT353 types  
I Application-optimized pinout  
1.3 Applications  
I Current mirror  
I Differential amplifier  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO collector-emitter voltage  
IC  
open base  
-
-
45  
V
collector current  
DC current gain  
-
-
100  
450  
mA  
hFE  
VCE = 5 V;  
IC = 2 mA  
200  
290  
 
 
 
 
 

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