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PMP4501QAS PDF预览

PMP4501QAS

更新时间: 2024-11-14 11:12:51
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
11页 218K
描述
45 V, 100 mA NPN/NPN matched double transistorsProduction

PMP4501QAS 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.73
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):260端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:30Base Number Matches:1

PMP4501QAS 数据手册

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PMP4501QAS  
45 V, 100 mA NPN/NPN matched double transistors  
9 February 2018  
Product data sheet  
1. General description  
NPN/NPN matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-  
Mounted Device (SMD) plastic package.  
PNP/PNP complement: PMP5501QAS  
2. Features and benefits  
Reduces component count  
Reduces pick and place costs  
Low package height of 0.37 mm  
Current gain matching  
Base-emitter voltage matching  
Application-optimized pinout  
AEC-Q101 qualified  
3. Applications  
Current mirror  
Differential amplifier  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
-
-
45  
V
IC  
collector current  
-
-
100  
200  
450  
mA  
mA  
ICM  
peak collector current tp ≤ 1 ms; single pulse  
-
-
hFE  
DC current gain  
VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
200  
290  
Per device  
hFE1/hFE2  
DC current gain  
matching  
VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
0.95  
-
1
-
1.05  
2
VBE1−VBE2  
base-emitter voltage  
matching  
[1]  
mV  
[1] The smaller of the two values is subtracted from the larger value.  
 
 
 
 
 

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