Datasheet > PMP3906AYS-Q

PMP3906AYS-Q

更新时间： 2024-11-27 11:14:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	246K
描述
40 V, 200 mA PNP/PNP matched double transistorProduction

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PMP3906AYS-Q 数据手册

PMP3906AYS-Q

40 V, 200 mA PNP/PNP matched double transistor

3 August 2022

Product data sheet

1. General description

PNP/PNP matched double transistor in a SOT363 (SC-88) very small Surface-Mounted Device

(SMD) plastic package.

2. Features and benefits

•

Current gain matching

•

Base-emitter voltage matching

Application-optimized pinout

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Current mirror

Differential amplifier

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-40

I_C

collector current

DC current gain

-200

300

h_FE

V_CE= -1 V; I_C= -10 mA; T_amb= 25 °C

V_CE= -5 V; I_C= -2 mA; T_amb= 25 °C

100

180

Per device

h_FE1/h_FE2

DC current gain

matching

[1]

[2]

0.98

V_BE1−V_BE2

base-emitter voltage

matching

[1] The smaller of the two values is taken as the numerator.

[2] The smaller of the two values is subtracted from the larger value.

12 3 4 5 6 7...11

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