Datasheet > PMEG2015EA-Q

PMEG2015EA-Q

更新时间： 2024-11-17 15:19:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	181K
描述
20 V, 1.5 A low VF Schottky barrier diodeProduction

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PMEG2015EA-Q 数据手册

PMEG2015EA-Q

20 V, 1.5 A low VF Schottky barrier diode

1 September 2023

Product data sheet

1. General description

Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a

SOD323 (SC-76) very small SMD plastic package.

2. Features and benefits

•

Forward current: 1.5 A

•

Reverse voltage: 20 V

Ultra high-speed switching

Very low forward voltage

Very small plastic SMD package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Ultra high-speed switching

Voltage clamping

Protection circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_R

I_F

reverse voltage

forward current

forward voltage

T_sp≤ 55 °C

1.5

V_F

I_F= 1.5 A; pulsed; t_p= 300 µs; δ = 0.02;

T_amb= 25 °C

560

660

I_R

reverse current

V_R= 15 V; t_p= 300 µs; δ = 0.02; pulsed;

T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simplified outline

Graphic symbol

anode

sym001

SOD323

12 3 4 5 6 7 8

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