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PMEG2020CPA,115 PDF预览

PMEG2020CPA,115

更新时间: 2024-01-06 14:28:37
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 132K
描述
PMEG2020CPA - 2 A low V_F dual MEGA Schottky barrier rectifier DFN 3-Pin

PMEG2020CPA,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, HUSON3, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:7.95Base Number Matches:1

PMEG2020CPA,115 数据手册

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PMEG2020CPA  
2 A low VF dual MEGA Schottky barrier rectifier  
Rev. 1 — 5 August 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in  
common cathode configuration with an integrated guard ring for stress protection,  
encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic  
package with medium power capability.  
1.2 Features and benefits  
„ Average forward current: IF(AV) 2 A  
„ Reverse voltage: VR 20 V  
„ Low forward voltage  
„ Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity  
„ Leadless small SMD plastic package with medium power capability  
„ AEC-Q101 qualified  
1.3 Applications  
„ Low voltage rectification  
„ High efficiency DC-to-DC conversion  
„ Switch Mode Power Supply (SMPS)  
„ Reverse polarity protection  
„ Low power consumption applications  
„ Battery chargers for mobile equipment  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tj = 25 °C unless otherwise specified.  
Symbol  
Per diode  
IF(AV)  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
average forward  
current  
square wave;  
δ = 0.5; f = 20 kHz  
[1]  
Tamb 80 °C  
Tsp 140 °C  
-
-
-
-
-
-
2
A
-
2
A
VR  
VF  
IR  
reverse voltage  
forward voltage  
reverse current  
-
20  
V
IF = 2 A  
385  
380  
420  
1000  
mV  
μA  
VR = 20 V  
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.  
 
 
 
 
 
 

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