Datasheet > PMEG2020CPA,115

PMEG2020CPA,115

更新时间： 2024-11-16 19:56:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	132K
描述
PMEG2020CPA - 2 A low V_F dual MEGA Schottky barrier rectifier DFN 3-Pin

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技术参数
数据手册

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PMEG2020CPA,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	DFN	包装说明：	2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, HUSON3, 3 PIN
针数：	3	Reach Compliance Code：	compliant
风险等级：	7.95	Base Number Matches：	1

PMEG2020CPA,115 数据手册

PMEG2020CPA

2 A low V_Fdual MEGA Schottky barrier rectifier

Rev. 1 — 5 August 2010

Product data sheet

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in

common cathode configuration with an integrated guard ring for stress protection,

encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic

package with medium power capability.

1.2 Features and benefits

Average forward current: I_F(AV)≤ 2 A

Reverse voltage: V_R≤ 20 V

Low forward voltage

Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity

Leadless small SMD plastic package with medium power capability

AEC-Q101 qualified

1.3 Applications

Low voltage rectification

High efficiency DC-to-DC conversion

Switch Mode Power Supply (SMPS)

Reverse polarity protection

Low power consumption applications

Battery chargers for mobile equipment

1.4 Quick reference data

Table 1.

Quick reference data

T_j= 25 °C unless otherwise specified.

Symbol

Per diode

I_F(AV)

Parameter

Conditions

Min

Typ

Max

Unit

average forward

current

square wave;

δ = 0.5; f = 20 kHz

[1]

T_amb≤ 80 °C

T_sp≤ 140 °C

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

I_F= 2 A

385

380

420

1000

μA

V_R= 20 V

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.

12 3 4 5 6 7...15

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