Datasheet > PMEG3002AEB

PMEG3002AEB

更新时间： 2023-09-03 20:29:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	172K
描述
Low VF MEGA Schottky barrier diodeProduction

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PMEG3002AEB 数据手册

PMEG3002AEB

30 V, 200 mA low VF Schottky barrier diode

12 June 2023

Product data sheet

1. General description

Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a

SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Forward current: 200 mA

•

Reverse voltage: 30 V

Very low forward voltage

Ultra small SMD package

AEC-Q101 qualified

3. Applications

•

Ultra high-speed switching

High efficiency DC/DC conversion

Voltage clamping

Inverse-polarity protection

Low voltage rectification

Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_R

I_F

reverse voltage

forward current

forward voltage

200

480

V_F

I_F= 200 mA; pulsed; t_p≤ 300 µs; δ ≤

0.02; T_amb= 25 °C

420

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode[1]

anode

Simplified outline

Graphic symbol

sym001

SC-79 (SOD523)

[1] The marking bar indicates the cathode.

12 3 4 5 6 7 8

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