Datasheet > PMEG100T30ELP-Q

PMEG100T30ELP-Q

更新时间： 2023-09-03 20:28:26

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	253K
描述
100 V, 3 A low leakage current Trench MEGA Schottky barrier rectifierProduction

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PMEG100T30ELP-Q

100 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_(BR)R

reverse breakdown

voltage

I_R= 1 mA; pulsed; T_j= 25 °C

[1]

100

V_F

forward voltage

I_F= 0.5 A; pulsed; T_j= 25 °C

I_F= 1 A; pulsed; T_j= 25 °C

I_F= 2 A; pulsed; T_j= 25 °C

I_F= 3 A; pulsed; T_j= 25 °C

I_F= 3 A; pulsed; T_j= -40 °C

I_F= 3 A; pulsed; T_j= 125 °C

I_F= 3 A; pulsed; T_j= 150 °C

V_R= 60 V; pulsed; T_j= 25 °C

V_R= 100 V; pulsed; T_j= 25 °C

V_R= 100 V; pulsed; T_j= 125 °C

V_R= 100 V; pulsed; T_j= 150 °C

V_R= 1 V; f = 1 MHz; T_j= 25 °C

V_R= 10 V; f = 1 MHz; T_j= 25 °C

[1]

480

540

630

705

580

545

0.1

550

610

710

800

650

620

0.8

1.75

2.2

µA

I_R

reverse current

0.25

0.42

1.65

300

µA

C_d

t_rr

diode capacitance

reverse recovery time I_F= 0.5 A; I_R= 0.5 A; I_R(meas)= 0.1 A;

step recovery T_j= 25 °C

reverse recovery time dI_F/dt = 200 A/µs; I_F= 6 A; V_R= 26 V;

ramp recovery T_j= 25 °C

12.5

1.3

I_RM

peak reverse recovery dI_F/dt = 200 A/s; I_F= 6 A; V_R= 26 V;

current

T_j= 25 °C

Q_rr

reverse recovery

charge

V_FRM

peak forward recovery I_F= 0.5 A; dI_F/dt = 20 A/µs; T_j= 25 °C

voltage

480

[1] Very short pulse, in order to maintain a stable junction temperature.

PMEG100T30ELP-Q

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Product data sheet

7 July 2021

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