Datasheet > PMEG10010ELR-Q

PMEG10010ELR-Q

更新时间： 2024-11-02 11:12:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	260K
描述
100 V, 1 A low leakage current Schottky barrier rectifierProduction

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PMEG10010ELR-Q 数据手册

PMEG10010ELR-Q

100 V, 1 A low leakage current Schottky barrier rectifier

16 November 2022

Product data sheet

1. General description

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in

a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Average forward current: I_F(AV)≤ 1 A

•

Reverse voltage: V_R≤ 100 V

Low forward voltage: V_F= 710 mV

High power capability due to clip-bonding technology

Extremely low leakage current I_R= 40 nA

High temperature T_j≤ 175 °C

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low voltage rectification

High efficiency DC-to-DC conversion

Switch mode power supply

Reverse polarity protection

Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5; f = 20 kHz; square wave; T_sp

170 °C

≤

V_R

V_F

reverse voltage

forward voltage

T_j= 25 °C

100

770

I_F= 1 A; t_p≤ 300 µs; δ ≤ 0.02;

T_j= 25 °C

710

I_R

reverse current

V_R= 100 V; t_p≤ 300 µs; δ ≤ 0.02;

T_j= 25 °C

150

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode[1]

anode

Simplified outline

Graphic symbol

sym001

CFP3 (SOD123W)

[1] The marking bar indicates the cathode.

12 3 4 5 6 7...14

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