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PMEG10020ELR PDF预览

PMEG10020ELR

更新时间: 2024-11-25 11:16:15
品牌 Logo 应用领域
安世 - NEXPERIA 功效光电二极管
页数 文件大小 规格书
14页 286K
描述
100 V, 2 A low leakage current Schottky barrier rectifierProduction

PMEG10020ELR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.57
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.83 VJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.68 W
参考标准:AEC-Q101; IEC-60134最大重复峰值反向电压:100 V
最大反向电流:0.15 µA最大反向恢复时间:0.0037 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUALBase Number Matches:1

PMEG10020ELR 数据手册

 浏览型号PMEG10020ELR的Datasheet PDF文件第2页浏览型号PMEG10020ELR的Datasheet PDF文件第3页浏览型号PMEG10020ELR的Datasheet PDF文件第4页浏览型号PMEG10020ELR的Datasheet PDF文件第5页浏览型号PMEG10020ELR的Datasheet PDF文件第6页浏览型号PMEG10020ELR的Datasheet PDF文件第7页 
PMEG10020ELR  
100 V, 2 A low leakage current Schottky barrier rectifier  
1 January 2023  
Product data sheet  
1. General description  
Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in  
a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Average forward current: IF(AV) ≤ 2 A  
Reverse voltage: VR ≤ 100 V  
Low forward voltage: VF = 770 mV  
High power capability due to clip-bonding technology  
Extremely low leakage current IR = 40 nA  
High temperature Tj ≤ 175 °C  
3. Applications  
Low voltage rectification  
High efficiency DC-to-DC conversion  
Switch mode power supply  
Reverse polarity protection  
Low power consumption applications  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VR  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
2
Unit  
V
reverse voltage  
Tj = 25 °C  
-
-
-
-
IF(AV)  
average forward  
current  
δ = 0.5; f = 20 kHz; square wave; Tsp  
160 °C  
[1]  
A
VF  
IR  
forward voltage  
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02;  
Tj = 25 °C  
-
-
770  
40  
830  
150  
mV  
nA  
reverse current  
VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02;  
Tj = 25 °C  
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.  
 
 
 
 
 

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