Datasheet > PMEG10010ELR

PMEG10010ELR

更新时间： 2024-09-26 21:14:43

品牌	Logo	应用领域
恩智浦 - NXP		功效测试光电二极管
页数	文件大小	规格书
15页	291K
描述
SIGNAL DIODE

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中文翻译

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技术参数
数据手册

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PMEG10010ELR 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.73
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

PMEG10010ELR 数据手册

PMEG10010ELR

100 V, 1 A low leakage current Schottky barrier rectifier

8 September 2016

Product data sheet

1. General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Average forward current: I_F(AV)≤ 1 A

•

Reverse voltage: V_R≤ 100 V

Low forward voltage: V_F= 710 mV

High power capability due to clip-bonding technology

Extremely low leakage current I_R= 40 nA

High temperature T_j≤ 175 °C

AEC-Q101 qualified

3. Applications

•

Low voltage rectification

High efficiency DC-to-DC conversion

Switch mode power supply

Reverse polarity protection

Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

square wave; δ = 0.5 ; f = 20 kHz;

T_sp≤ 170 °C

V_R

V_F

reverse voltage

forward voltage

T_j= 25 °C

100

770

I_F= 1 A; t_p≤ 300 µs; δ ≤ 0.02 ;

T_j= 25 °C

710

I_R

reverse current

V_R= 100 V; t_p≤ 300 µs; T_j= 25 °C; δ ≤

0.02

150

12 3 4 5 6 7...15

中文翻译

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