Datasheet > PMCXB900UE

PMCXB900UE

更新时间： 2024-11-25 11:15:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
20页	789K
描述
20 V, complementary N/P-channel Trench MOSFETProduction

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PMCXB900UE 数据手册

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

30 June 2015

Product data sheet

1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a

leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic

package using Trench MOSFET technology.

2. Features and benefits

Trench MOSFET technology

•

Very low threshold voltage for portable applications: V_GS(th)= 0.7 V

Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

ElectroStatic Discharge (ESD) protection > 1 kV HBM

3. Applications

Relay driver

High-speed line driver

Level shifter

•

Power management in battery-driven portables

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= 4.5 V; I_D= 600 mA; T_j= 25 °C

470

620

mΩ

TR2 (P-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= -4.5 V; I_D= -500 mA; T_j= 25 °C

1.02

1.4

TR1 (N-channel)

V_DS

drain-source voltage

drain current

T_j= 25 °C

I_D

V_GS= 4.5 V; T_amb= 25 °C

[1]

600

TR2 (P-channel)

V_DS

I_D

drain-source voltage

drain current

T_j= 25 °C

-20

V_GS= -4.5 V; T_amb= 25 °C

-500

12 3 4 5 6 7...20

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