PMD10K60

更新时间： 2024-11-24 10:07:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	65K
描述
isc Silicon NPN Darlingtion Power Transistor

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中文翻译

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技术参数
数据手册

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PMD10K60 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

PMD10K60 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlingtion Power Transistor

PMD10K60

DESCRIPTION

·High DC current gain

·Collector-Emitter Sustaining Voltage-

_CEO(SUS)= 60V(Min)

·Complement to type PMD11K60

APPLICATIONS

·Designed for general purpose amplifier and low frequency

switching applications

ABSOLUTE MAXIMUM RATINGS(T_C=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

5.0

Collector Current -Continuous

Collector Current-Peak

Base Current

I_CP

I_B

0.2

P_C

Collector Power Dissipation@T_C=25℃

Junction Temperature

150

-65~200

℃

T_j

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

ThermalResistance, Junction to Case

1.17

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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