Datasheet > PMCM6501UNE

PMCM6501UNE

更新时间： 2024-09-29 11:11:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	421K
描述
20 V, N-channel Trench MOSFETProduction

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PMCM6501UNE 数据手册

PMCM6501UNE

20 V, N-channel Trench MOSFET

2 June 2023

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size

Package (WLCSP) using Trench MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Ultra small package: 0.98 × 1.48 × 0.35 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

•

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

I_D

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; I_D= 3 A; T_j= 25 °C

[1]

8.7

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm²

12 3 4 5 6 7...14

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