Datasheet > PMCM6501UPE

PMCM6501UPE

更新时间： 2023-09-03 20:39:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	378K
描述
20 V, P-channel Trench MOSFETProduction

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PMCM6501UPE 数据手册

PMCM6501UPE

20 V, P-channel Trench MOSFET

3 July 2017

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size

Package (WLCSP) using Trench MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Ultra small package: 0.98 x 1.48 x 0.35 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

•

Battery switch

High-speed line driver

High-side loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

-20

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

I_D

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -4.5 V; I_D= -3 A; T_j= 25 °C

[1]

-7.3

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm²

12 3 4 5 6 7...15

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