Datasheet > PMCM6501VPE

PMCM6501VPE

更新时间： 2023-09-03 20:28:52

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	771K
描述
12 V, P-channel Trench MOSFETProduction

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PMCM6501VPE 数据手册

PMCM6501VPE

12 V, P-channel Trench MOSFET

10 August 2015

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level

Chip-Size Package (WLCSP) using Trench MOSFET technology.

2. Features and benefits

Low threshold voltage

Ultra small package: 0.98 × 1.48 × 0.35 mm

Trench MOSFET technology

•

ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

Battery switch

•

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

-12

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-8

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -4.5 V; I_D= -3.0 A; T_j= 25 °C

[1]

-8.2

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...15

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