Datasheet > PMCM950ENE

PMCM950ENE

更新时间： 2024-09-29 11:16:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	470K
描述
60 V, N-channel Trench MOSFETProduction

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PMCM950ENE 数据手册

PMCM950ENE

60 V, N-channel Trench MOSFET

13 May 2019

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size

Package (WLCSP) using Trench MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Ultra small package: 1.48 × 1.48 × 0.35 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

•

High-speed line driver

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= 10 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 10 V; I_D= 3 A; T_j= 25 °C

[1]

6.1

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...14

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