Datasheet > PMCPB5530XA

PMCPB5530XA

更新时间： 2024-09-29 17:15:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
20页	396K
描述
20 V, complementary Trench MOSFETProduction

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PMCPB5530XA 数据手册

PMCPB5530XA

20 V, complementary Trench MOSFET

18 March 2024

Product data sheet

1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and

leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Very fast switching

Trench MOSFET technology

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Exposed drain pad for excellent thermal conduction

AEC-Q101 qualified

3. Applications

•

DC to DC conversion

High-speed line driver

High/Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel)

V_DS

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

4.5

V_GS

-10

I_D

V_GS= 4.5 V; T_amb= 25 °C

T_j= 25 °C

[1]

TR2 (P-channel)

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

-20

-10

V_GS= -4.5 V; T_amb= 25 °C

V_GS= 4.5 V; I_D= 4.5 A; T_j= 25 °C

-3.6

TR1 (N-channel), Static characteristics

R_DSon

drain-source on-state

resistance

mΩ

TR2 (P-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= -4.5 V; I_D= -3.6 A; T_j= 25 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...20

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