N- & P-Channel Enhancement Mode Field
Effect Transistor
PK609CA
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
D1 D1 D2 D2
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60mΩ
25mΩ
ID
Q2
Q1
-40V
40V
-14A
19.5A
G. GATE
D. DRAIN
S. SOURCE
#1
S1 G1 S2
G2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
VDS
Q2
-40
±20
-14
-8.8
-54
-5.3
-4.2
-21
22
Q1
40
UNITS
V
V
Gate-Source Voltage
VGS
±20
19.5
12.3
63
TC = 25 °C
Continuous Drain Current4
Pulsed Drain Current1
Continuous Drain Current3
ID
IDM
ID
TC = 100 °C
TA = 25 °C
TA = 70 °C
7.7
6.1
14
A
Avalanche Current
Avalanche Energy
IAS
L = 0.1mH
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
EAS
10
mJ
W
21
20
Power Dissipation
Power Dissipation3
PD
8.6
3.1
2
8
3.1
2
PD
W
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Q2
TYPICAL
MAXIMUM
UNITS
40
40
Junction-to-Ambient2
t ≦10s
RJA
Q1
Q2
Q1
Q2
Q1
74
RJA
Junction-to-Ambient2
Steady-State
°C / W
76
5.8
6.2
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3The Power dissipation is based on RJA t ≦10s value.
4Package limitation current :Q1=15A,Q2=-16A.
H-38-3
REV1.0
1