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PJ2306 PDF预览

PJ2306

更新时间: 2024-09-20 10:09:51
品牌 Logo 应用领域
强茂 - PANJIT 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
5页 203K
描述
30V N-Channel Enhancement Mode MOSFET - ESD Protected

PJ2306 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.67
Is Samacsys:N其他特性:ULTRA-LOW RESISTANCE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):3.2 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):16 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PJ2306 数据手册

 浏览型号PJ2306的Datasheet PDF文件第2页浏览型号PJ2306的Datasheet PDF文件第3页浏览型号PJ2306的Datasheet PDF文件第4页浏览型号PJ2306的Datasheet PDF文件第5页 
PJ2306  
30V N-Channel Enhancement Mode MOSFET - ESD Protected  
FEATURES  
• RDS(ON), VGS@10V,IDS@3.2A=65m  
• RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ  
• Advanced Trench Process Technology  
• High Density Cell Design For Ultra Low On-Resistance  
• Very Low Leakage Current In Off Condition  
• Specially Designed for Load Switch, PWM Applications  
• ESD Protected  
• Component are in compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: SOT-23 Package  
Terminals : Solderable per MIL-STD-750,Method 2026  
• Marking : 06  
D
3
1
2
G
S
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )  
PARAMETER  
Symbol  
VDS  
Limit  
30  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
ID  
+20  
3.2  
16  
V
A
Continuous Drain Current  
1)  
Pulsed Drain Current  
IDM  
A
TA=25OC  
TA=75OC  
1.25  
0.75  
Maximum Power Dissipation  
PD  
W
Operating Junction and Storage Temperature Range  
Junction-to Ambient Thermal Resistance(PCB mounted)2  
TJ,TSTG  
-55 to + 150  
100  
OC  
OC/W  
R
θJA  
Note: 1. Maximum DC current limited by the package  
2. Surface mounted on FR4 board, t < 5 sec  
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE  
June 03, 2010-REV.00  
PAGE . 1  

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