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PHP36N06E PDF预览

PHP36N06E

更新时间: 2024-09-26 22:44:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 53K
描述
PowerMOS transistor

PHP36N06E 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83其他特性:AVALANCHE RATED
雪崩能效等级(Eas):100 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):41 A最大漏源导通电阻:0.038 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):275 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:125 W最大脉冲漏极电流 (IDM):164 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):225 ns最大开启时间(吨):120 ns
Base Number Matches:1

PHP36N06E 数据手册

 浏览型号PHP36N06E的Datasheet PDF文件第2页浏览型号PHP36N06E的Datasheet PDF文件第3页浏览型号PHP36N06E的Datasheet PDF文件第4页浏览型号PHP36N06E的Datasheet PDF文件第5页浏览型号PHP36N06E的Datasheet PDF文件第6页浏览型号PHP36N06E的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PowerMOS transistor  
PHP36N06E  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic envelope.  
The device is intended for use in  
automotive applications, Switched  
Mode Power Supplies (SMPS),  
motor control, welding, DC/DC and  
AC/DC converters, and in general  
purpose switching applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
60  
41  
125  
175  
38  
V
A
W
˚C  
m  
Ptot  
Tj  
RDS(ON)  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
1 2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
Drain-source voltage  
-
-
60  
60  
V
V
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (DC)  
RGS = 20 kΩ  
-
-
-
30  
V
Tmb = 25 ˚C  
Tmb = 100 ˚C  
-
41  
29  
164  
125  
175  
175  
A
ID  
-
A
IDM  
Ptot  
Tstg  
Tj  
Drain current (pulse peak value) Tmb = 25 ˚C  
-
A
Total power dissipation  
Storage temperature  
Junction temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Thermal resistance junction to  
-
1.2  
K/W  
mounting base  
Rth j-a  
Thermal resistance junction to  
ambient  
60  
-
K/W  
August 1996  
1
Rev 1.000  

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