Datasheet > PF5024R

PF5024R

更新时间： 2024-11-15 19:44:19

品牌	Logo	应用领域
WTE		局域网二极管
页数	文件大小	规格书
2页	27K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 20V V(RRM), Silicon, DO-21, HERMETIC SEALED, METAL, PRESSFIT-1

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PF5024R 数据手册

WTE

POWER SEMICONDUCTORS

PF5020 & PF5024

50A AVALANCHE 1/2" PRESS-FIT DIODE

Features

Diffused Junction

Low Leakage

Low Cost

High Surge Current Capability

Typical IR less than 200nA

Anode +

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Mechanical Data

DO-21

Case: DO-21, Copper Case and Components

Hermetically Sealed

Dim

Min

15.77

12.73

1.25

Max

15.97

12.82

1.31

9.85

5.90

—

Terminals: Contact Areas Readily Solderable

Polarity: Cathode to Case (Reverse Units Are

Available Upon Request and Are Designated

By A “R” Suffix, i.e. PF5020R or PF5024R)

Polarity: Red Color Equals Standard,

Black Color Equals Reverse Polarity

Mounting Position: Any

9.55

5.70

28.00

All Dimensions in mm

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

PF5020

PF5024

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

Average Rectified Output Current

@T_C= 150°C

I^O

Breakdown Voltage Min.

Breakdown Voltage Max.

@I_R= 100mA

V^BR

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

500

Forward Voltage

@I_F= 50A

V^FM

I^RM

1.0

Peak Reverse Current

At Rated DC Blocking Voltage

200

@T_A= 25°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

C^j

400

1.0

°C/W

°C

R^ꢀ^JC

Operating and Storage Temperature Range

T^J, T^STG

-65 to +175

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance: Junction to case, single side cooled.

PF5020 & PF5024

1 of 2

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