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PF503-BP PDF预览

PF503-BP

更新时间: 2024-11-15 19:47:31
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
2页 150K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, PRESSFIT-1

PF503-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PRESSFIT-1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-XUPF-P1JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:650 A
元件数量:1相数:1
端子数量:1最大输出电流:50 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:PRESS FIT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:PIN/PEG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

PF503-BP 数据手册

 浏览型号PF503-BP的Datasheet PDF文件第2页 
M C C  
TM  
PF501  
thru  
PF505  
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20736 Marilla Street Chatsworth  
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Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
·
·
·
·
·
Low Cost  
Low Leakage  
Low Forward Voltage Drop  
High Current Capability  
For Automotive Applications  
50Amp Standard  
Recovery Rectifier  
50 to 600 Volts  
Maximum Ratings  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
PRESSFIT  
Standard polarity : Case is Cathode ; Lead is Anode  
Note for positive terminal part number is as shown PF501P  
For negative terminal add an "N" to the suffix of the part  
number . i.e. PF501N  
F
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
PF501  
PF502  
PF503  
---  
---  
---  
35V  
70V  
140V  
50V  
100V  
200V  
100V  
200V  
E
PF504  
PF505  
---  
---  
400V  
600V  
280V  
420V  
400V  
600V  
D
C
A
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
50A  
TA = 125°C  
B
Peak Forward Surge  
Current  
IFSM  
650A 8.3ms, half sine  
Maximum  
DIMENSIONS  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
IFM = 50A;  
TJ = 25°C*  
INCH  
ES  
MM  
DIM  
A
MIN  
MAX  
MIN  
MAX  
12.82  
15.97  
5.90  
9.90  
-----  
NOTE  
0.505  
0.629  
0.232  
0.390  
-----  
12.73  
0.501  
0.621  
0.224  
0.378  
1.102  
0.048  
B
15.77  
5.70  
5mA  
500mA  
TJ = 25°C  
TJ = 100°C  
C
D
E
F
9.60  
28.00  
0.052  
1.22  
1.32  
Typical Junction  
Capacitance  
CJ  
150pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
Revision: 6  
2005/03/11  

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