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PF506-BP PDF预览

PF506-BP

更新时间: 2024-11-15 12:58:43
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 98K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon, PRESSFIT-1

PF506-BP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:PRESSFIT-1
针数:1Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.75Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-XUPF-P1
JESD-609代码:e3最大非重复峰值正向电流:650 A
元件数量:1相数:1
端子数量:1最大输出电流:50 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:PRESS FIT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
表面贴装:NO端子面层:MATTE TIN
端子形式:PIN/PEG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

PF506-BP 数据手册

 浏览型号PF506-BP的Datasheet PDF文件第2页 
M C C  
PF501  
thru  
PF507  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
·
·
·
·
·
Low Cost  
Low Leakage  
Low Forward Voltage Drop  
High Current Capability  
For Automotive Applications  
50Amp Standard  
Recovery Rectifier  
50 to 1000 Volts  
Maximum Ratings  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
PRESSFIT  
Standard polarity : Case is Cathode ; Lead is Anode  
Note for positive terminal part number is as shown  
For negative terminal add an "N" to the suffix of the part  
number . i.e. PF501N  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
DC  
A
Voltage  
Blocking  
Voltage  
PF501  
PF502  
PF503  
---  
---  
---  
35V  
70V  
140V  
50V  
100V  
200V  
100V  
200V  
B
C
E
PF504  
PF505  
PF506  
---  
---  
---  
400V  
600V  
800V  
280V  
420V  
560V  
400V  
600V  
800V  
F
PF507  
---  
1000V  
700V  
1000V  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
D
Average Forward  
Current  
IF(AV)  
50A  
TA = 125°C  
Peak Forward Surge  
Current  
IFSM  
650A 8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
IFM = 50A;  
TJ = 25°C*  
INCHES  
MIN  
.097  
1.063  
------  
.501  
1.22  
.258  
MM  
MIN  
2.464  
27.00  
------  
12.73  
3.10  
6.55  
DIM  
A
B
C
D
E
E
MAX  
.103  
1.142  
.395  
.505  
.130  
MAX  
2.616  
29.00  
10.04  
12.82  
3.30  
NOTE  
1 mA  
10mA  
TJ = 25°C  
TJ = 125°C  
.278  
7.05  
Typical Junction  
Capacitance  
CJ  
150pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

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