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PF503NL-BP PDF预览

PF503NL-BP

更新时间: 2024-11-15 21:14:23
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 131K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, PRESSFIT-1

PF503NL-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PRESSFIT-1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-XUPF-P1JESD-609代码:e3
最大非重复峰值正向电流:500 A元件数量:1
相数:1端子数量:1
最大输出电流:50 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:PRESS FIT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:PIN/PEG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

PF503NL-BP 数据手册

 浏览型号PF503NL-BP的Datasheet PDF文件第2页浏览型号PF503NL-BP的Datasheet PDF文件第3页 
M C C  
TM  
PF501L  
thru  
PF505L  
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20736 Marilla Street Chatsworth  
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Micro Commercial Components  
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Features  
Low Cost  
Low Leakage  
Low Forward Voltage Drop  
High Current Capability  
For Automotive Applications  
50Amp Standard  
Recovery Rectifier  
50 to 800 Volts  
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
PRESSFIT  
Storage Temperature: -55°C to +150°C  
Standard polarity : Case is Cathode ; Lead is Anode  
Note for positive terminal part number is as shown PF501  
For negative terminal add an "N" to the suffix of the part  
F
number . i.e. PF501NL  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
E
PF501L  
PF502L  
PF503L  
---  
---  
---  
35V  
70V  
140V  
50V  
100V  
200V  
100V  
200V  
D
PF504L  
PF505L  
---  
---  
400V  
600V  
280V  
420V  
400V  
600V  
C
A
B
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
50A  
TA = 125°C  
Peak Forward Surge  
Current  
IFSM  
500A 8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
VF  
1.0V  
1.1V  
IFM = 50A;TA=25oC  
IFM = 100A;TA=25oC  
DIMENSIONS  
INCH  
ES  
MM  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Maximum thermal  
Resistance, junction  
to case  
DIM  
A
MIN  
MAX  
MIN  
MAX  
12.82  
15.97  
5.90  
NOTE  
IR  
5µA  
TJ = 25°C  
TJ = 100°C  
0.505  
0.629  
0.232  
0.390  
0.700  
0.103  
12.75  
15.77  
0.502  
0.621  
0.224  
0.378  
0.600  
0.097  
500µA  
B
5.70  
C
9.60  
9.90  
D
15.24  
2.43  
E
F
17.78  
2.62  
12oC/W  
RthJC  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
www.mccsemi.com  
Revision: 4  
2008/06/11  
1 of 3  

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