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PF502P-B PDF预览

PF502P-B

更新时间: 2024-11-16 06:43:23
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 298K
描述
Transistor

PF502P-B 数据手册

 浏览型号PF502P-B的Datasheet PDF文件第2页 
M C C  
TM  
PF501  
thru  
PF505  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
·
·
·
·
·
Low Cost  
Low Leakage  
Low Forward Voltage Drop  
High Current Capability  
For Automotive Applications  
50Amp Standard  
Recovery Rectifier  
50 to 600 Volts  
Maximum Ratings  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
PRESSFIT  
Standard polarity : Case is Cathode ; Lead is Anode  
Note for positive terminal part number is as shown PF501P  
For negative terminal add an "N" to the suffix of the part  
number . i.e. PF501N  
F
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
PF501  
PF502  
PF503  
---  
---  
---  
35V  
70V  
140V  
50V  
100V  
200V  
100V  
200V  
E
PF504  
PF505  
---  
---  
400V  
600V  
280V  
420V  
400V  
600V  
D
C
A
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
50A  
TA = 125°C  
B
Peak Forward Surge  
Current  
IFSM  
650A 8.3ms, half sine  
Maximum  
DIMENSIONS  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
IFM = 50A;  
TJ = 25°C*  
INCH  
ES  
MM  
DIM  
A
MIN  
MAX  
MIN  
MAX  
12.82  
15.97  
5.90  
9.90  
-----  
NOTE  
0.505  
0.629  
0.232  
0.390  
-----  
12.73  
0.501  
0.621  
0.224  
0.378  
1.102  
0.048  
B
15.77  
5.70  
5mA  
500mA  
TJ = 25°C  
TJ = 100°C  
C
D
E
F
9.60  
28.00  
0.052  
1.22  
1.32  
Typical Junction  
Capacitance  
CJ  
150pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
Revision: 6  
2005/03/11  

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